| PART |
Description |
Maker |
| HYM72V64756BLT8-P HYM72V64756BLT8-S HYM72V64756BT8 |
64Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
|
Samsung Semiconductor Co., Ltd.
Leshan Radio Company, Ltd.
Hynix Semiconductor
|
| W3DG7268V7JD1 W3DG7268V10AD1 W3DG7268V10JD1 W3DG72 |
512MB- 64Mx72 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7266S403BD4I W3EG7266S202AD4I W3EG7266S202BD4I |
512MB - 64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYS72D64320GBR-7-B HYS72D32300GBR-7-B HYS72D64300G |
DDR SDRAM Modules - 512 MB (64Mx72) PC2700; 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank, FBGA based
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC3200 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC2700 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank available 2Q/04
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based
DDR SDRAM Modules - 1GB (128Mx72) PC2700 2-bank, FBGA based
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank, FBGA based
|
Infineon
|
| W3EG7263S335JD3 W3EG7263S202AJD3 W3EG7263S202D3 W3 |
512MB- 64Mx72 DDR SDRAM REGISTERED w/PLL
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
http://
|
| WV3HG64M72AER534AD6SG WV3HG64M72AER403AD6MG WV3HG6 |
512MB - 64Mx72 DDR2 SDRAM REGISTERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| WV3HG64M72EER-D6 |
512MB - 64Mx72 DDR2 SDRAM REGISTERED DIMM, w/PLL
|
White Electronic Designs Corporation
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W3DG6465V7D1 W3DG6465V-D1 W3DG6465V75D1 W3DG6465V1 |
512MB- 64Mx64 SDRAM UNBUFFERED
|
http://
White Electronic Designs Corporation
|
